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ADB2504P 3N70K ZY43B IRF9Z24S BXXXXXXB EVALZ F535L KF200
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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1162
DESCRIPTION With TO-3PL package Complement to type 2SD1717 Excellent linearity of hFE Wide area of safe operation (ASO) High transition frequency fT APPLICATIONS For high power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER

HAN INC
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak
SEM GE
Open base
CONDITIONS
Open emitter
OND IC
TOR UC
VALUE -160 -160 -5 -12 -20 3.5
UNIT V V V A A
Open collector
PC
Collector power dissipation TC=25ae 120 150 -55~150 ae ae
W
Tj Tstg
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-8A ;IB=-0.8A IC=-8A ; VCE=-5V VCB=-160V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-8A ; VCE=-5V IC=-0.5A ; VCE=-5V f=1MHz;VCB=-10V 20 60 20 MIN TYP.
2SB1162
SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT
MAX -2.0 -1.8 -50 -50
UNIT V V |I |I A A
200
COB
IN
S
Collector output capacitance

P
hFE-2 classifications Q 60-120
80-160
ANG CH
100-200
EMIC ES
OND
TOR UC
20 210
MHz pF
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1162
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.50 mm)
3


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