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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1162 DESCRIPTION With TO-3PL package Complement to type 2SD1717 Excellent linearity of hFE Wide area of safe operation (ASO) High transition frequency fT APPLICATIONS For high power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -160 -160 -5 -12 -20 3.5 UNIT V V V A A Open collector PC Collector power dissipation TC=25ae 120 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-8A ;IB=-0.8A IC=-8A ; VCE=-5V VCB=-160V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-8A ; VCE=-5V IC=-0.5A ; VCE=-5V f=1MHz;VCB=-10V 20 60 20 MIN TYP. 2SB1162 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT MAX -2.0 -1.8 -50 -50 UNIT V V |I |I A A 200 COB IN S Collector output capacitance P hFE-2 classifications Q 60-120 80-160 ANG CH 100-200 EMIC ES OND TOR UC 20 210 MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1162 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.50 mm) 3 |
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